2SC4546 3 Pin Transistor isc Silicon NPN Power Transistor
manufacturer:
Manufacturer
Description:
Bipolar (BJT) Transistor NPN 400 V 7 A 10MHz 30 W Through Hole TO-220F
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Collector-Base Voltage:
600 V
Collector-Emitter Voltage:
400 V
Emitter-Base Voltage:
7 V
Collector Current-Continuous:
7 A
Junction Temperature:
150 ℃
Storage Temperature:
-55~150 ℃
Highlight:
multi emitter transistor
,silicon power transistors
Introduction
Stock Offer (Hot Sell)
| Part No. | Quantity | Brand | D/C | Package |
| RURG8060 | 6054 | FSC | 13+ | TO-247 |
| S1133 | 4195 | HAMAMATSU | 13+ | DIP-2 |
| S14K320 | 92000 | EPSON | 15+ | DIP |
| S1D13506F00A200 | 2146 | EPSON | 11+ | QFP |
| S1G-E3/61T | 18000 | VISHAY | 16+ | DO-214 |
| S21152BB | 1768 | INTEL | 10+ | QFP |
| S25FL128P0XMFI001 | 12260 | SPANSION | 16+ | SOP-16 |
| S25FL216KOPMFI011 | 68000 | SPANSION | 14+ | SOP-8 |
| S25FL512SAGMFI013 | 3723 | SPANSION | 15+ | SOP-16 |
| S29AL016D70TFI010 | 5204 | SPANSION | 08+ | TSSOP-48 |
| S29JL064H90TFI00 | 5068 | SPANSION | 06+ | TSSOP-48 |
| S2B-PH-K-S | 167000 | JST | 14+ | SMD |
| S2J-E3/52T | 75000 | VISHAY | 15+ | DO-214AA |
| S2S4BYOF | 13830 | SHARP | 16+ | SOP-4 |
| S34ML08G101BHI000 | 2100 | SPANSION | 16+ | BGA63 |
| S3A-E3/57T | 8500 | VISHAY | 16+ | DO-214AB |
| S3B-13-F | 67000 | DIODES | 16+ | DO-214AB |
| S3C6410X66-YB40 | 2983 | SAMSUNG | 14+ | BGA |
| S3F9454BZZ-DK94 | 5833 | SAMSUNG | 09+ | DIP |
| S4X8ES | 69000 | LITTELFUS | 10+ | TO-92 |
| S558-5500-25-F | 5804 | BELFUSE | 15+ | SOP-16 |
| S5B-PH-K-S(LF)(SN) | 94000 | JST | 16+ | NA |
| S5M-E3/57T | 77000 | VISHAY | 16+ | DO-214AB |
| S6040R | 8070 | LITTELFUS | 14+ | TO-220 |
| S6B-XH-SM4-TB(LF)(SN) | 7573 | JST | 16+ | SMD |
| S7B-PH-SM4-TB(LF)(SN) | 23131 | JST | 13+ | SMD |
| S8025L | 8041 | TECCOR | 07+ | TO-220 |
| S8065K | 5681 | TECCOR | 16+ | TO-3P |
| SAB80C517A-N18-T3 | 2443 | 14+ | PLCC84 | |
| SAFEA2G35MB0F00R15 | 6517 | MURATA | 16+ | SMD |
isc Silicon NPN Power Transistor 2SC4546
DESCRIPTION
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)
·High Switching Speed
APPLICATIONS
·Designed for switching regulator, lighting inverter and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
| SYMBOL | PARAMETER | VALUE | UNIT |
| VCBO | Collector-Base Voltage | 600 | V |
| VCEO | Collector-Emitter Voltage | 400 | V |
| VEBO | Emitter-Base Voltage | 7 | V |
| IC | Collector Current-Continuous | 7 | A |
| ICM | Collector Current-Peak | 14 | A |
| IB | Base Current-Continuous | 2 | A |
| PC | Collector Power Dissipation @TC=25℃ | 30 | W |
| TJ | Junction Temperature | 150 | ℃ |
| Tstg | Storage Temperature | -55~150 | ℃ |
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MOQ:
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