Send Message
Home > products > Electronic IC Chips > IRF3415 Power MOSFET high voltage power mosfet dual power mosfet

IRF3415 Power MOSFET high voltage power mosfet dual power mosfet

manufacturer:
Manufacturer
Description:
N-Channel 150 V 43A (Tc) 200W (Tc) Through Hole TO-220AB
Category:
Electronic IC Chips
Price:
Negotiation
Payment Method:
T/T, Western Union,PayPal
Specifications
Continuous Drain Current, VGS @ 10V:
30 A
Pulsed Drain Current :
150 A
Power Dissipation:
200 W
Linear Derating Factor:
1.3 W/°C
Highlight:

npn smd transistor

,

multi emitter transistor

Introduction

STOCK LIST 


AT24C512B-PU4500ATMEL15+DIP-8
BDP9494500 12+SOT-223
BYT01-4004500ST16+NA
BYW96E4500PHILIPS12+SOD64
DF08S/274500VISHAY16+SOP-4
HT9170D4500HOLTEK16+SOP
KST2222AMTF4500FAIRCHILD16+SOT23
L65624500ST16+SOP8
LM1117MP-3.34500NS16+SOT-223
LMC567CN4500NS14+DIP8
MT8870DE4500MT16+DIP
SP208EEA4500SIPEX16+SSOP-24
TDA70504500PHILIPS15+SOP-8
TPN3021RL4500ST16+SOP8
A10134520FSC15+TO-92
ADM485JN4520AD12+DIP-8
LMC6482IM4520NS16+SOP-8
RTL8111B4520REALTEK12+QFN
TPA6017A2PWPR4520TI16+HTSSOP20
LM1086IS-1.84555NS16+TO263
VND8304566ST16+SOP16
L6563D4571ST16+SOP
LP324M4588NS16+TSSOP14
SN75173D4613TI14+SOP-16

 
 
 
 


IRF3415

Power MOSFET high voltage power mosfet dual power mosfet

► Advanced Process Technology
► Dynamic dv/dt Rating
►175°C Operating Temperature
► Fast Switching l Fully Avalanche Rated
 
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
 
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
 
 
 
 

Related Products
Image Part # Description
0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL

0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL

10 kOhms ±5% 0.063W, 1/16W Chip Resistor 0402 (1005 Metric) Moisture Resistant Thick Film
200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603

200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603

30 Ohms 1 Power Line Ferrite Bead 0603 (1608 Metric) 5A 10mOhm
22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC

22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC

22 Ohms ±5% 0.1W, 1/10W Chip Resistor 0402 (1005 Metric) Automotive AEC-Q200 Thick Film
MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm

MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm

750 V 6.5 kA Varistor 1 Circuit Through Hole Disc 20mm
2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor

2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor

Bipolar (BJT) Transistor PNP 60 V 3 A 50MHz 1 W Surface Mount D-Pak
IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A

IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A

N-Channel 300 V 140A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK)
DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes

DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes

47V Clamp 3A (8/20µs) Ipp Tvs Diode Surface Mount USC
PMEG6010ER​ 1A Low VF MEGA Schottky Barrier Rectifier SOD123

PMEG6010ER​ 1A Low VF MEGA Schottky Barrier Rectifier SOD123

Diode 60 V 1A Surface Mount SOD-123W
SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC

SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC

Diode 40 V 3A Surface Mount DO-214AC, SMA
SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes

SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes

9.2V Clamp 65.3A Ipp Tvs Diode Surface Mount DO-214AA (SMBJ)
Send RFQ
Stock:
MOQ:
5pcs