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Home > products > Electronic IC Chips > IRF3205ZPBF AUTOMOTIVE MOSFET switching power mosfet low power mosfet

IRF3205ZPBF AUTOMOTIVE MOSFET switching power mosfet low power mosfet

manufacturer:
Manufacturer
Description:
N-Channel 55 V 75A (Tc) 170W (Tc) Through Hole TO-220AB
Category:
Electronic IC Chips
Price:
Negotiation
Payment Method:
T/T, Western Union,PayPal
Specifications
Continuous Drain Current, VGS @ 10V (Silicon Limited):
110 A
Continuous Drain Current, VGS @ 10V:
78 A
Continuous Drain Current, VGS @ 10V (Package Limited):
75 A
Pulsed Drain Current:
440 A
Power Dissipation:
170 W
Highlight:

npn smd transistor

,

multi emitter transistor

Introduction

STOCK LIST 


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SG6841DZ 4200 SG 14+ DIP-8
SN75HVD3082EP 4200 TI 16+ DIP
BSP450 4210   16+ SOT223
HD74LS14P-E-Q 4210 RENESAS 15+ DIP14
TLZ5V1C 4210 VISHAY 16+ LL-34
PCF8593T 4211 15+ SOP8
BDW94C 4250 ST 12+ TO-220
LQM21FN1R0N00D 4250 MURATA 16+ SMD
AT93C66-10SU-2.7 4252 ATMEL 12+ SOP-8
2N3906 4287 ON 16+ TO-92
DS18B20 4444 MAXIM 16+ TO-92
95SQ015 4456 IR 16+ DO-204AD
PDTC143ET 4477 16+ SOT-23
BZX284-C12 4480 PHI 16+ SOD-323
1SMB5920BT3G 4500 ON 14+ DO-214AA
1SMB5922BT3G 4500 ON 16+ DO-214AA
1SMB5929BT3G 4500 ON 16+ DO-214AA
82C250T 4500 15+ SOP
ADM202EAN 4500 AD 16+ DIP

 

 


IRF3205ZPBF

AUTOMOTIVE MOSFET switching power mosfet low power mosfet

Features

 ►Advanced Process Technology 

 ►Ultra Low On-Resistance  

 ►175°C Operating Temperature 

 ►Fast Switching 

 ►Repetitive Avalanche Allowed up to Tjmax

 ►Lead-Free

 

Description

Specifically designed for Automotive applications, ID = 75A this HEXFETÆ Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

 

 

 

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