IRFZ44NPBF Power Mosfet Transistor power mosfet ic electrical ic
manufacturer:
Manufacturer
Description:
N-Channel 55 V 49A (Tc) 94W (Tc) Through Hole TO-220AB
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Continuous Drain Current:
49 A
Pulsed Drain Current:
160 A
Power Dissipation:
94 W
Linear Derating Factor:
0.63 W/°C
Gate-to-Source Voltage:
± 20 V
Repetitive Avalanche Energy:
9.4 MJ
Highlight:
npn smd transistor
,multi emitter transistor
Introduction
Stock Offer (Hot Sell)
| Part no. | Quantity | Brand | D/C | Package |
| STU404D | 5000 | SAMHOP | 15+ | TO252 |
| TB6560AHQ | 5000 | TOSHIBA | 16+ | ZIP |
| TC4001BP | 5000 | TOSHIBA | 16+ | DIP-14 |
| TCA785 | 5000 | INFINECN | 14+ | DIP |
| TCN75AVOA | 5000 | MICROCHIP | 14+ | SOIC-8 |
| TCN75AVOA713 | 5000 | MICROCHIP | 14+ | SOP8 |
| TDA1524A | 5000 | 16+ | DIP | |
| TL072CP | 5000 | TI | 16+ | DIP8 |
| TLP127 | 5000 | TOSHIBA | 13+ | SOP |
| TLP620-4 | 5000 | TOSHIBA | 15+ | DIP |
| TOP244YN | 5000 | POWER | 16+ | TO-220 |
| TS274CDT | 5000 | ST | 16+ | SOP-14 |
| TS924AIDT | 5000 | ST | 14+ | SOP-14 |
| UC3844BD ST | 5000 | ST | 14+ | SOP8 |
| UDA1341TS | 5000 | 14+ | SSOP28 | |
| VIPER22A | 5000 | ST | 16+ | DIP-8 |
| VLF4012AT-4R7M1R1 | 5000 | TDK | 16+ | SMD |
| PBSS5160T | 5001 | 13+ | SOT-23 | |
| PL2303 | 5001 | PROLIFIC | 15+ | SSOP |
| NDT451AN | 5002 | FSC | 16+ | SOT223 |
| MAX1681ESA | 5008 | MAXIM | 16+ | SOP8 |
| HFJ11-2450E-L12 | 5009 | HALOELECT | 14+ | RJ45 |
| L6598 | 5010 | ST | 14+ | SOP16 |
| ZM4744A | 5100 | VISHAY | 14+ | LL41 |
| HCNW136 | 5101 | AVAGO | 16+ | DIP8 |
| CQ1565RT | 5111 | FAIRCHILD | 16+ | TO-220 |
| FZT758TA | 5111 | ZETEX | 13+ | SOT223 |
| LM324DR | 5111 | TI | 15+ | SOP-14 |
| TFA9842 | 5112 | 16+ | ZIP | |
| MAX483ESA | 5117 | MAXIM | 16+ | SOP-8 |
IRFZ44NPbF
HEXFET® Power MOSFET
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
VDSS = 55V
RDS(on) = 17.5mΩ
ID = 49A
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 49 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 35 | A |
| IDM | Pulsed Drain Current | 160 | A |
| PD @TC = 25°C | Power Dissipation | 94 | W |
| Linear Derating Factor | 0.36 | W/°C | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| IAR | Avalanche Current | 25 | A |
| EAR | Repetitive Avalanche Energy | 9.4 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
|
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | °C | |
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
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MOQ:
20pcs