FGH60N60SFDTU Power Mosfet Module 600V , 60A Field Stop IGBT
manufacturer:
Manufacturer
Description:
IGBT Field Stop 600 V 120 A 378 W Through Hole TO-247-3
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Collector To Emitter Voltage:
600 V
Gate To Emitter Voltage:
± 20 V
Collector Current @ TC = 25℃:
120 A
Pulsed Collector Current @ TC = 25℃:
180 A
Operating Junction Temperature:
-55 To +150 ℃
Storage Temperature Range:
-55 To +150 ℃
Highlight:
npn smd transistor
,silicon power transistors
Introduction
FGH60N60SFD
600V, 60A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =2.3V @ IC = 60A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFC
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.
Absolute Maximum Ratings
| Symbol | Description | Ratings | Units |
| VCES | Collector to Emitter Voltage | 600 | V |
| VGES | Gate to Emitter Voltage | ± 20 | V |
| IC | Collector Current @ TC = 25℃ | 120 | A |
| Collector Current @ TC = 100℃ | 60 | A | |
| ICM (1) | Pulsed Collector Current @ TC = 25℃ | 180 | A |
| PD | Maximum Power Dissipation @ TC = 25℃ | 378 | W |
| Maximum Power Dissipation @ TC = 100℃ | 151 | W | |
| TJ | Operating Junction Temperature | -55 to +150 | ℃ |
| Tstg | Storage Temperature Range | -55 to +150 | ℃ |
| TL | Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds | 300 | ℃ |
Notes: 1: Repetitive test, Pulse width limited by max. juntion temperature
Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
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