New & Original Silicon NPN DarliCM GROUPon Power Transistors 2SD2390
Specifications
Collector-base Voltage:
160V
Collector-emitter Voltage:
150V
Emitter-base Voltage:
5V
Collector Current:
10A
Base Current:
1A
Collector Power Dissipation:
100W
Junction Temperature:
150 ℃
Storage Temperature:
-55~150 ℃
Highlight:
npn smd transistor
,silicon power transistors
Introduction
Silicon NPN DarliCM GROUPon Power Transistors 2SD2390
DESCRIPTION
·With TO-3PN package
·Complement to type 2SB1560
·High DC current gain
APPLICATIONS
·Audio ,regulator and general purpose
PINNING
PIN | DESCRIPTION |
1 | Base |
2 |
Collector;connected to mounting base |
3 | Emitter |
CHARACTERISTICS Tj=25℃ unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-emitter breakdown voltage | IC=30mA ;IB=0 | 150 | V | ||
VCEsat | Collector-emitter saturation voltage | IC=7A ;IB=7mA | 2.5 | V | ||
VBEsat | Base-emitter saturation voltage | IC=7A ;IB=7mA | 3.0 | V | ||
ICBO | Collector cut-off current | VCB=160V IE=0 | 100 | μA | ||
IEBO | Emitter cut-off current | VEB=5V; IC=0 | 100 | μA | ||
hFE | DC current gain | IC=7A ; VCE=4V | 5000 | |||
Cob | Output capacitance | IE=0 ; VCB=10V;f=1MHz | 95 | pF | ||
fT | Transition frequency | IC=2A ; VCE=12V | 55 | MHz | ||
Switching times | ||||||
ton | Turn-on time |
IC=7A;RL=10Ω IB1=- IB2=7mA VCC=70V |
0.5 | μs | ||
ts | Storage time | 10.0 | μs | |||
tf | Fall time | 1.1 | μs |
hFE Classifications
O | P | Y |
5000-12000 | 6500-20000 | 15000-30000 |
PACKAGE OUTLINE
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MOQ:
20pcs