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Home > products > Electronic IC Chips > Original 3 Pin Transistor BD249C-S NPN High Power Transistor 25A 125W

Original 3 Pin Transistor BD249C-S NPN High Power Transistor 25A 125W

manufacturer:
Manufacturer
Description:
Bipolar (BJT) Transistor NPN 100 V 25 A 3 W Through Hole SOT-93
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union,Paypal
Specifications
Shipment:
DHL, FedeX, UPS, EMS Etc
Main Line:
IC Components, Transistor, Diode, Module,Capacitor Etc
Lot No.:
1274552
Temperature:
-65 To +150 °C
Voltage:
100V
Package:
TO-218
Highlight:

multi emitter transistor

,

silicon power transistors

Introduction

Original 3 Pin Transistor BD249C NPN High Power Transistor 25A 125W

 

 

NPN High−Power Transistor NPN  BD249C

high−power transistors are for general−purpose power amplifier and switching applications.

 

 

Features

• ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V

• Epoxy Meets UL 94 V−0 @ 0.125

• Pb−Free Package is Available*

 

MAXIMUM RATINGS   

Rating Symbol Value Unit
Collector − Emitter Voltage Vceo 100 Vdc
Collector − Base Voltage Vcbo 100 Vdc
Emitter − Base Voltage Vebo 5.0 Vdc
Collector Current − Continuous Peak (Note 1) Ic

25

40

Adc

Apk

Base Current − Continuous Ib 5.0 Adc
Total Device Dissipation @ TC = 25°C Derate above 25°C Pd

125

1.0

W

W/°C

Operating and Storage Junction Temperature Range 

TJ,

Tstg

–65 to +150 °C
Unclamped Inductive Load Esb 90 mJ

 

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Case

RøJC  1.0 °C/W

Thermal Resistance,

Junction−to−Ambient

RøJA 35.7 °C/W

 

Stresses exceeding Maximum Ratings may damage the device.

Maximum Ratings are stress ratings only. Functional operation

above the Recommended Operating Conditions is not implied.

Extended exposure to stresses above the Recommended

Operating Conditions may affect device reliability. 1. Pulse

Test: Pulse Width 300 s, Duty Cycle 2.0%. *

 

 

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