MMBTA42LT1G Power Mosfet Transistor NPN Silicon High Voltage Transistors
multi emitter transistor
,silicon power transistors
MMBTA42LT1G, MMBTA43LT1G
High Voltage Transistors
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
| Characteristic | Symbol | Value | Unit |
|
Collector−Emitter Voltage MMBTA42 MMBTA43 |
VCEO |
300 200 |
Vdc |
|
Collector−Base Voltage MMBTA42 MMBTA43 |
VCBO |
300 200 |
Vdc |
|
Emitter−Base Voltage MMBTA42 MMBTA43 |
VEBO |
6.0 6.0 |
Vdc |
| Collector Current − Continuous | IC | 500 | mAdc |
THERMAL CHARACTERISTICS
| Characteristic | Symbol | Value | Unit |
|
Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C |
PD |
225 1.8 |
mW mW/°C |
|
Thermal Resistance, Junction−to−Ambient |
RθJA |
556 |
°C/W |
|
Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C |
PD |
300 2.4 |
mW mW/°C |
| Thermal Resistance, Junction−to−Ambient | RθJA | 417 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | −55 to +150 | °C |
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
Stock Offer (Hot Sell)
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