MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors
power mosfet ic
,silicon power transistors
MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors
MJD112 (NPN)
MJD117 (PNP)
Complementary DarliCM GROUPon Power Transistors
DPAK For Surface Mount Applications
SILICON POWER TRANSISTORS
2 AMPERES
100 VOLTS
20 WATTS
Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.
Features
• Pb−Free Packages are Available
• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel (“T4” and “RL” Suffix)
• Electrically Similar to Popular TIP31 and TIP32 Series
MAXIMUM RATINGS
| Rating | Symbol | Max | Unit |
| Collector−Emitter Voltage | VCEO | 100 | Vdc |
| Collector−Base Voltage | VCB | 100 | Vdc |
| Emitter−Base Voltage | VEB | 5 | Vdc |
|
Collector Current − Continuous Peak |
IC |
2 4 |
Adc |
| Base Current | IB | 50 | mAdc |
|
Total Power Dissipation @ TC = 25°C Derate above 25°C |
PD |
20 0.16 |
W W/°C |
|
Total Power Dissipation* @ TA = 25°C Derate above 25°C |
PD |
1.75 0.014 |
W W/°C |
| Operating and Storage Junction Temperature Range | TJ, Tstg | −65 to +150 | °C |
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
MARKING DIAGRAMS
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
DPAK−3
CASE 369D−01
ISSUE B
0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL
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22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC
MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm
2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor
IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A
DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes
PMEG6010ER 1A Low VF MEGA Schottky Barrier Rectifier SOD123
SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC
SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes
| Image | Part # | Description | |
|---|---|---|---|
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0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL |
10 kOhms ±5% 0.063W, 1/16W Chip Resistor 0402 (1005 Metric) Moisture Resistant Thick Film
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200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603 |
30 Ohms 1 Power Line Ferrite Bead 0603 (1608 Metric) 5A 10mOhm
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22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC |
22 Ohms ±5% 0.1W, 1/10W Chip Resistor 0402 (1005 Metric) Automotive AEC-Q200 Thick Film
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MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm |
750 V 6.5 kA Varistor 1 Circuit Through Hole Disc 20mm
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2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor |
Bipolar (BJT) Transistor PNP 60 V 3 A 50MHz 1 W Surface Mount D-Pak
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IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A |
N-Channel 300 V 140A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK)
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DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes |
47V Clamp 3A (8/20µs) Ipp Tvs Diode Surface Mount USC
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PMEG6010ER 1A Low VF MEGA Schottky Barrier Rectifier SOD123 |
Diode 60 V 1A Surface Mount SOD-123W
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SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC |
Diode 40 V 3A Surface Mount DO-214AC, SMA
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SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes |
9.2V Clamp 65.3A Ipp Tvs Diode Surface Mount DO-214AA (SMBJ)
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