BC548B npn darliCM GROUPon power transistor Power Mosfet Transistor NPN General Purpose Transistor
Specifications
Collector Current Continuous:
100 MAdc
Total Device Dissipation Alumina Substrate, TA = 25℃:
625 MW/℃
TJ:
-55 To +150 ℃
Tstg:
-55 To +150 ℃
Emitter-Base Breakdown Voltage:
6 Vdc
Package:
TO-92
Highlight:
multi emitter transistor
,silicon power transistors
Introduction
NPN General Purpose Transistor
Maximum Ratings ( TA=25°C unless otherwise noted)
Rating | Symbol | BC546 | BC547 | BC548 | Unit |
Collector-Emitter Voltage | VECO | 65 | 45 | 30 | Vdc |
Collector-Base Voltage | VCBO | 80 | 50 | 30 | Vdc |
Emitter-Base Voltage | VEBO | 6 | 6 | 6 | Vdc |
Collector Current Continuous | IC | 100 | mAdc |
THERMAL CHARACTERISTICS
Characteristics | Symbol | Max | Unit | |
Total Device Dissipation Alumina Substrate, TA = 25℃ |
BC546 BC547 BC548 |
PD | 625 | mW/℃ |
Junction and Storage, Temperature |
BC546 BC547 BC548 |
TJ, Tstg | -55 to +150 | ℃ |
TO-92 Outline Dimensions
Stock Offer (Hot Sell)
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