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Home > products > Electronic IC Chips > BC548B npn darliCM GROUPon power transistor Power Mosfet Transistor NPN General Purpose Transistor

BC548B npn darliCM GROUPon power transistor Power Mosfet Transistor NPN General Purpose Transistor

manufacturer:
Manufacturer
Description:
Bipolar (BJT) Transistor NPN 30 V 100 mA 500 mW Through Hole TO-92
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Collector Current Continuous:
100 MAdc
Total Device Dissipation Alumina Substrate, TA = 25℃:
625 MW/℃
TJ:
-55 To +150 ℃
Tstg:
-55 To +150 ℃
Emitter-Base Breakdown Voltage:
6 Vdc
Package:
TO-92
Highlight:

multi emitter transistor

,

silicon power transistors

Introduction

 

NPN General Purpose Transistor

 

Maximum Ratings ( TA=25°C unless otherwise noted)

Rating Symbol BC546 BC547 BC548 Unit
Collector-Emitter Voltage VECO 65 45 30 Vdc
Collector-Base Voltage VCBO 80 50 30 Vdc
Emitter-Base Voltage VEBO 6 6 6 Vdc
Collector Current Continuous IC 100 mAdc

 

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit
Total Device Dissipation Alumina Substrate, TA = 25℃

BC546

BC547

BC548 

PD 625 mW/℃
Junction and Storage, Temperature

BC546

BC547

BC548

TJ, Tstg -55 to +150

 

 

 

TO-92 Outline Dimensions

 

 

 

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