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Home > products > Power Management ICs > KA5Q0765RTHYDTU Integrated Circuit Chip Quasi Resonant Converter Controller, Internal Burst Mode Controller

KA5Q0765RTHYDTU Integrated Circuit Chip Quasi Resonant Converter Controller, Internal Burst Mode Controller

manufacturer:
Manufacturer
Description:
Converter Offline Topology 18kHz ~ 22kHz TO-220F-5L (Forming)
Category:
Power Management ICs
Price:
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Specifications
Drain-Gate Voltage (RGS=1MΩ):
650 V
Gate-Source (GND) Voltage:
±30 V
Single Pulsed Avalanch Energy:
370 MJ
Avalanch Current:
17 A
Supply Voltage:
40 V
Total Power Dissipation:
45 W
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Introduction

 
KA5Q0765RTH
Fairchild Power Switch(FPS)
 
Features
• Quasi Resonant Converter Controller
• Internal Burst Mode Controller for Stand-by Mode
• Pulse by Pulse Current Limiting
• Over Current Latch Protection
• Over Voltage Protection (Vsync: Min. 11V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto-Restart Mode
• Primary Side Regulation
 
Description
The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consists of a high voltage power SenseFET and a current mode PWM IC. The integrated PWM controller includes the fixed oscillator, the under voltage lock out, the leading edge blanking, the optimized gate turn-on/turn-off driver, the thermal shut down protection, the over voltage protection, and the temperature compensated precision current sources for loop compensation and fault protection circuitry. Compared to a discrete MOSFET and a controller or a RCC switching converter solutions, a Fairchild Power Switch(FPS) can reduce the total number of components, design size, and weight, so it will improve efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective design in a quasi-resonant converter as a C-TV power supply.
 
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)

ParameterSymbolValueUnit
Drain-Gate Voltage (RGS=1MΩ)VDGR650V
Gate-Source (GND) VoltageVGS±30V
Drain Current Pulsed (2)IDM28ADC
Single Pulsed Avalanch Energy (3)EAS370mJ
Avalanch Current (4)IAS17A
Continuous Drain Current (Tc = 25°C)ID7ADC
Continuous Drain Current (TC=100°C)ID4.5ADC
Supply VoltageVCC40V
Analog Input Voltage RangeVsync-0.3 to 13V
VFB-0.3 to VCCV
Total Power DissipationPD45W
Operating Junction TemperatureTJ+150°C
Operating Ambient TemperatureTA-25 to +85°C
Storage Temperature RangeTSTG-55 to +150°C
Thermal ResistanceRthjc2.98°C/W

Notes:
1. Tj = 25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L = 30mH, VDD = 50V, RG = 25Ω, starting Tj = 25°C
4. L = 13uH, starting Tj = 25°C
 
Internal Block Diagram
 
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