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Home > products > Electronic IC Chips > 200V 50A Metal Oxide TO247 N Channel Power Mosfet IRFP260MPBF

200V 50A Metal Oxide TO247 N Channel Power Mosfet IRFP260MPBF

manufacturer:
Infineon
Description:
N-Channel 200 V 50A (Tc) 300W (Tc) Through Hole TO-247AC
Category:
Electronic IC Chips
Price:
To be negotiated
Payment Method:
T/T, Western Union ,paypal
Specifications
PN:
IRFP260MPBF
Brands:
IR
Original:
USA
Package:
TO-247
Current:
50A
Voltage:
200V
Highlight:

TO247 N Channel Power Mosfet

,

50A N Channel Power Mosfet

,

IRFP260MPBF Power Mosfet

Introduction

IRFP260MPBF  N - Channel Power Mosfet 200V 50A Through Hole Metal Oxide TO247-3

 

 

 

FEATURES

 

Type : MOSFETS-Single

 

Packaging :Tube

 

Part state: ACTIVE

 

FET type : N - Channel

 

Technology : MOSFET (Metal Oxide)

 

Drain-source voltage (VDSS) : 200V

 

Current - Continuous Drains (ID) (at 25°C): 50A (Tc)

 

Driving voltage (maximum RDS ON, minimum RDS ON) :10V

 

VGS (th) with different IDs (maximum) : 4V @ 250µA

 

Gate charge (Qg) at different VGs (Max.) : 234nC @ 10V

 

Input capacitance (CISS) at different VDS (maximum):  4057pF @ 25V

 

VGS (maximum) : ±20V

 

Power Dissipation (Maximum) : 300W (Tc)

 

RDS ON (Max.) : 40 mOhm @ 28A, 10V

 

Operating Temperature: -55°C ~ 175°C (TJ)

 

Install type: Through Hole

 

Supplier device package : TO-247AC

 

Package/enclosure : TO-247-3

 

 

 

 

 

 

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Stock:
MOQ:
10pcs